2sk3703 no.7681-1/5 features ? low on-resistance. ? 4v drive. ? ultrahigh-speed switching. ? motor drive, dc / dc converter. ? avalanche resistance guarantee. specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit drain-to-source voltage v dss 60 v gate-to-source voltage v gss 20 v drain current (dc) i d 30 a drain current (pulse) i dp pw10 m s, duty cycle 1% 120 a allowable power dissipation p d 2.0 w tc=25 c25w channel temperature tch 150 c storage temperature tstg --55 to +150 c avalanche energy (single pulse) *1 e as 135 mj avalanche current *2 i av 30 a note : * 1 v dd =20v, l=200 m h, i av =30a * 2 l 200m h, single pulse electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0v 60 v zero-gate voltage drain current i dss v ds =60v, v gs =0v 1 m a gate-to-source leakage current i gss v gs = 16v, v ds =0v 10 m a cutoff voltage v gs (off) v ds =10v, i d =1ma 1.2 2.6 v forward transfer admittance ? yfs ? v ds =10v, i d =15a 13 22 s static drain-to-source on-state resistance r ds (on)1 i d =15a, v gs =10v 20 26 m w r ds (on)2 i d =15a, v gs =4v 28 40 m w marking : k3703 continued on next page. tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : en7681a any and all sanyo semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo semiconductor representative nearest you before usingany sanyo semiconductor products described or contained herein in such applications. sanyo semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor products described or contained herein. 72506qa ms im tc-00000067 / 61504 ts im ta-100813 sanyo semiconductors data sheet 2sk3703 n-channel silicon mosfet general-purpose switching device applications
2sk3703 no.7681-2/5 continued from preceding page. ratings parameter symbol conditions min typ max unit input capacitance ciss v ds =20v, f=1mhz 1780 pf output capacitance coss v ds =20v, f=1mhz 266 pf reverse transfer capacitance crss v ds =20v, f=1mhz 197 pf turn-on delay time t d (on) see specified test circuit. 16.5 ns rise time t r see specified test circuit. 110 ns turn-off delay time t d (off) see specified test circuit. 166 ns fall time t f see specified test circuit. 144 ns total gate charge qg v ds =30v, v gs =10v, i d =30a 40 nc gate-to-source charge qgs v ds =30v, v gs =10v, i d =30a 6.5 nc gate-to-drain miller charge qgd v ds =30v, v gs =10v, i d =30a 11.5 nc diode forward voltage v sd i s =30a, v gs =0v 1.0 1.2 v package dimensions switching time test circuit unit : mm (typ) 7508-003 avalanche resistance test circuit 10.0 3.2 4.5 2.8 16.0 18.1 5.6 14.0 3.5 7.2 2.4 1.6 1.2 0.7 0.75 2.55 2.55 123 1 : gate 2 : drain 3 : source sanyo : to-220ml pw=10 m s d.c. 1% p. g 50 w g s d i d =15a r l =2 w v dd =30v v out 2sk3703 v in 10v 0v v in 50 w 10v 0v 3 50 w v dd l 2sk3703
2sk3703 no.7681-3/5 i d -- v ds drain current, i d -- a drain-to-source voltage, v ds -- v it05386 0 50 45 40 35 30 25 20 15 10 5 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 2.0 1.6 1.8 i d -- v gs drain current, i d -- a gate-to-source voltage, v gs -- v it05387 r ds (on) -- v gs gate-to-source voltage, v gs -- v it05388 0 70 60 50 40 30 10 20 2345678910 r ds (on) -- tc case temperature, tc -- c it05389 0 60 50 40 30 20 10 --50 --25 0 25 50 75 100 125 150 0 50 45 40 35 30 25 20 15 10 5 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 5.0 4.0 4.5 tc=25 c tc= --25 c --25 c tc=75 c 75 c 25 c 25 c --25 c 25 c tc=75 c i d =15a i d =15a, v gs =4v i d =15a, v gs =10v static-drain-to-source on-state resistance, r ds (on) -- m w static-drain-to-source on-state resistance, r ds (on) -- m w v gs =3v 4v 6v 8v 10v v ds =10v ? yfs ? -- i d forward transfer admittance, ? y fs ? -- s drain current, i d -- a it05390 i s -- v sd source current, i s -- a diode forward voltage, v sd -- v it05391 100 2 3 5 7 3 5 7 10 5 7 1.0 2 0.1 1.0 23 57 23 57 23 10 5 0 0.3 0.6 0.9 1.2 0.001 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 2 3 5 tc= --25 c 75 c ciss, coss, crss -- v ds ciss, coss, crss -- pf drain-to-source voltage, v ds -- v it05393 sw time -- i d drain current, i d -- a switching time, sw time -- ns it05392 10 7 2 2 3 5 100 5 3 7 5 3 2 10 1.0 0.1 5 3 2 7 5 3 2 t r t f t d (on) t d (off) v dd =30v v gs =10v v gs =0v tc=75 c 25 c --25 c 1000 100 2 3 5 7 7 2 3 5 0 5 10 15 20 25 30 crss coss ciss f=1mhz 25 c
2sk3703 no.7681-4/5 a s o drain-to-source voltage, v ds -- v drain current, i d -- a it05395 0.1 2 3 5 5 7 2 3 7 2 3 1.0 10 100 5 7 2 3 23 57 23 57 23 57 0.1 1.0 10 case temperature, tc -- c p d -- tc allowable power dissipation, p d -- w it05396 0 20 40 60 80 100 120 140 160 0 35 30 25 20 15 10 5 ambient temperature, ta -- c p d -- ta allowable power dissipation, p d -- w it05397 0 20 40 60 80 100 120 140 160 0 0.5 1.0 1.5 2.0 2.5 v gs -- qg gate-to-source voltage, v gs -- v total gate charge, qg -- nc it05394 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 40 v ds =30v i d =30a i dp =120a i d =30a operatuon in this area is limited by r ds (on). tc=25 c single pulse <10 m s <10 m s 100 m s 1ms 100ms 10ms dc operation 0 0 25 50 75 100 125 150 100 80 60 20 40 120 175 e as -- ta avalanche energy derating factor -- % it10478 ambient temperature, ta -- c
2sk3703 no.7681-5/5 ps specifications of any and all sanyo semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo semiconductor co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo semiconductor co., ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. sanyo semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of july, 2006. specifications and information herein are subject to change without notice. note on usage : since the 2sk3703 is a mosfet product, please avoid using this device in the vicinity of highly charged objects.
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